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  • ReS2 二硫化錸晶體 (Rhenium Disulfide)

    Single crystal ReS? (Rhenium disulfide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropi

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:7469.8
    廠商性質(zhì):生產(chǎn)廠家
    訪問(wèn)次數(shù):881
  • WS2 二硫化鎢晶體 (Tungsten Disulfide)

    14 years of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals: Our large size (~1cm in size) vdW WS2 crystals are treated as gold standards

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:7469.8
    廠商性質(zhì):生產(chǎn)廠家
    訪問(wèn)次數(shù):739
  • HfS2 二硫化鉿晶體 (Hafnium Disulfide)

    Hafnium disulfide (HfS?) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:7579.65
    廠商性質(zhì):生產(chǎn)廠家
    訪問(wèn)次數(shù):729
  • GaS 硫化鎵晶體 (Gallium Sulfide)

    Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT)

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:面議
    廠商性質(zhì):生產(chǎn)廠家
    訪問(wèn)次數(shù):796
  • p-type WS2 crystals P型二硫化鎢晶體

    More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:8238.75
    廠商性質(zhì):生產(chǎn)廠家
    訪問(wèn)次數(shù):755
  • GeS 硫化鍺晶體 (Germanium Sulphide)

    Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:6700.85
    廠商性質(zhì):生產(chǎn)廠家
    訪問(wèn)次數(shù):791
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泰州巨納新能源有限公司
  • 聯(lián)系人:陳谷一
  • 地址:江蘇省泰州市鳳凰西路168號(hào)
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