GaS 硫化鎵晶體 (Gallium Sulfide)

簡(jiǎn)要描述：Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT)

更新時(shí)間：2024-06-02
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二維材料

鈣鈦礦/OLED 異質(zhì)結(jié) MOFS材料其他二維材料二維材料溶液二維材料薄膜二維材料粉末絕緣體黑磷六方氮化硼晶體碲化物晶體硒化物晶體硫化物晶體查看全部產(chǎn)品

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Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT), and flux zone growth, to optimize grain sizes and reduce defect concentrations. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Bridgman and flux zone methods both offer similar grade qualities. Each crystal very large in size to last for years, is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
Properties of monoclinic GaS vdW crystals