GaSSe 硒化硫鎵晶體

簡(jiǎn)要描述：The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are per

更新時(shí)間：2024-06-03
產(chǎn)品型號(hào)：
廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家
訪(fǎng) 問(wèn) 量：877

產(chǎn)品咨詢(xún)聯(lián)系我們

產(chǎn)品分類(lèi)

二維材料

鈣鈦礦/OLED 異質(zhì)結(jié) MOFS材料其他二維材料二維材料溶液二維材料薄膜二維材料粉末絕緣體黑磷六方氮化硼晶體碲化物晶體硒化物晶體硫化物晶體查看全部產(chǎn)品

相關(guān)文章

詳細(xì)介紹

The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are perfectly layered in the c-axis direction, comes ready for exfoliation, and crystals have an impressive environmental stability. Single crystal GaSeTe comes ready for exfoliation and is ideal for 2D research. GaSeTe alloys only come at ~50% (GaSe0.5Te0.5) alloying ratio due to phase separation phenomena taking place at other compositions.

Properties of GaSSe vdW crystals