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Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA. TiS3 is a layered material like MoS2 and other layered systems.

ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, exhibiting Fermi liquid behavior with two Fermi pockets at low temperatures.

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV. It's fundamental band gap nature (direct vs indirect) and its value have been much deba

NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's magnetic response in the monolayer limit remain largely unknown.NiPS3 crystals all crystallize in C2/m space group geometr

14 years of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals: Our large size (~1cm in size) vdW WS2 crystals are treated as gold standards

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly luminescent in the monolayer from at 1.9 eV (quasi-particle / optical band gap).